Exam Plan:

The 2nd Midterm Exam will be in class on Friday, March 23 as announced in the syllabus. It will cover primarily the material since the First Midterm and recover the MOS bias with body effect and small-signal circuits. COVERAGE: H&S 4.5-4.6, 5.3, 6.1-6.5, 6.9, 7.1-7.5, 7.7-7.8, 8.2-8.3, 10.1-10.3

Possible options were discussed in class. A clear majority wanted the exam before Spring Break. The vote on a 90 minute evening exam versus a 53 minute in-class exam was close. When we looked at the only time option of Thursday evening (due to a 61 series exam on Wednesday) there was a slight majority to hold the exam in class on Friday. 

Lecture:

Relation of bipolar current gain to device doping and dimensions. Use of bipolar large signal model in circuits. Small-signal model derivation including base resistance, output resistance and base charging-capacitance. A simple amplifier circuit and its frequency response. 

Discussion Sections: 

Example of relating bipolar current gain to device doping and dimensions. Practice identifying the operating region of bipolar transistors in circuits. Load- line to find large-signal operating points. Example of gain and frequency response of a common-emitter amplifier.

Laboratories: 

Experiment #6

Homework:

The homework is being graded on a scale of 0-10 and you must achieve an 8 or better in the initial grading to have mastered the homework on schedule. Questions about grading should be emailed to kobe@uclink4.berkeley.edu.