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Lectures: Tuesdays & Thursdays 11:00 AM - 12:30 PM; 247 Cory
Discussion Section: Wednesdays 2-3 PM; 289 Cory
Course
Details:
Course Information Sheet
Syllabus and
Schedule
Policy on Academic
Dishonesty
Supplemental Resources:
EE130 Spring 2003 lecture notes
and videos
(Real Player)
EE130 Spring 2007 homework
assignments and solutions
EE130 Spring 2007 quizzes and final exam
Frequently misunderstood points in HW assignments and exams)
Summary notes on pn
junctions
Cool
educational applets
Silicon
band structure
Video lesson: Optoelectronic Diodes
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Lecturers:
Professor Tsu-Jae
King Liu
Office hour: Mondays 4-5 PM in 225 Cory
tking at eecs.berkeley.edu
Dr. Nuo Xu
Office hour: Mondays 12-1 PM and Tuesdays 3-4 PM in 225 Cory
nuoxu at eecs.berkeley.edu
Teaching Assistant:
Mr. Khalid Ashraf
Office Hour: Wednesdays 4-5 PM in 382 Cory
kashraf at eecs.berkeley.edu
Course Reference:
Modern Semiconductor Devices for Integrated Circuits by Chenming Hu
Differences in terminology between the Pierret and Hu textbooks are summarized
here.
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1/24/13: There were typographical errors on Slide 6 ("0.7 V" should be "0.7 eV") and on Slide 13 ("eV" should be "meV") of the Lecture 2 notes, which are now corrected.
2/5/13: There was an error (wrong value of hole thermal velocity) on Slide 12 of Lecture 4, which is now corrected.
2/7/13: Sign errors for the hole diffusion term on Slides 5 and 9 of Lecture 5 are now corrected.
2/14/13: There was a sign error for the hole diffusion term on Slide 4 of Lecture 6, which is now corrected.
2/20/13: There were errors (an extra factor of "q" before the Schottky barrier height) in Lecture 8 Slides 11 and 18, which are now corrected.
3/5/13: Sign errors on Slides 7 and 8 of Lecture 13 have been corrected. (QP is positive and QN is negative, for forward bias. Since electrons are supplied in the -x direction in order to maintain QN within the quasi-neutral p-type region, there should be a negative sign in front of the term QN/tau.)
4/30/13: Errors on Slide 9 of Lecture 22 have been corrected. Note that IDsat is not dependent on the bulk charge factor m, for a short-channel MOSFET.
4/16/13: Sentaurus 2012 version has been installed on one of the instructional servers. Device simulation and visualization from both unix and windows clients have been tested. Please see Slide 13 of the Sentaurus Tutorial Slides (Project folder) and the detailed announcement on piazza.
5/16/13: Any requests to regrade homework assignments should be made to the reader (Sergio: serg.hidalgo at berkeley dot edu) by 12 noon on Friday May 18.
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