EE130/230M Lecture Notes
Spring 2013
(Powerpoint format, unless otherwise noted)
Course Overview and Introduction

SEMICONDUCTOR FUNDAMENTALS
Lecture 1: General material properties; crystal structure; crystallographic notation; electrons and holes marked version
Lecture 2: Energy-band model; band-gap energy; density of states; doping marked version
Lecture 3: Thermal equilibrium, Fermi-Dirac distribution; relationship between EF and n, p; degenerately doped semiconductor marked version
Lecture 4: Properties of carriers in semiconductors; carrier drift; conductivity and resistivity marked version
Lecture 5: Carrier diffusion; generation and recombination marked version
Lecture 6: Continuity equations; minority carrier diffusion equations; quasi-Fermi levels marked version

METAL-SEMICONDUCTOR CONTACTS
Lecture 7: Poisson's equation; Work function; metal-semiconductor band diagram; depletion-layer width marked version
Lecture 8: Current flow; small-signal capacitance; practical ohmic contacts marked version (updated 2/20/13)

pn JUNCTION DIODES
Lecture 9: Electrostatics marked version
Lecture 10: Ideal diode equation (marked version)
Lecture 11: Narrow-base diode marked version
Supplementary slide on hyperbolic functions
Lecture 12: Junction breakdown; deviations from the ideal I-V marked version
Lecture 13: Charge-control model; small-signal model; turn-off transient response marked version
Lecture 14: Turn-on transient response; summary of important concepts; diode applications marked version (updated 3/12/13)

THE MOS CAPACITOR
Lecture 15: Energy band diagrams marked version
Lecture 16: Electrostatics marked version
Lecture 17: Small-signal capacitance marked version
Lecture 18: Effect of oxide charges; poly-Si gate depletion effect; VT adjustment marked version

THE MOSFET
Lecture 19: Structure and operation; CMOS devices and circuits marked version
Lecture 20: Qualitative theory; field-effect mobility; long-channel I-V characteristics marked version
Lecture 21: P-channel MOSFET; CMOS inverter analysis; sub-threshold current; small-signal model marked version
Lecture 22 - Slide 9 corrected 4/30/13: Velocity saturation; short-channel effect; MOSFET scaling approaches marked version - Slide 9 corrected 4/30/13
Supplementary slides to Lecture 22
Lecture 23: Drain-induced effects; source/drain structure; CMOS technology marked version (updated 4/18/13)

THE BIPOLAR JUNCTION TRANSISTOR
Lecture 24: Introduction; BJT fundamentals marked version
Lecture 25: Ideal transistor analysis; narrow base and narrow emitter; Ebers-Moll model; base-width modulation marked version
Lecture 26: Breakdown mechanisms; non-ideal effects; Gummel plot and numbers; modern BJT structures; base transit time marked version
Lecture 27: Small-signal model; cutoff frequency; transient response marked version

STATE-OF-THE-ART IC DEVICES
Lecture 28: CMOS technology advancement

EE130/230M Home Page


 Last updated 5/2/13