EE130/230M Lecture Notes | ||||||
Spring 2013 |
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(Powerpoint format, unless otherwise noted) |
Course Overview and Introduction SEMICONDUCTOR FUNDAMENTALS Lecture 1: General material properties; crystal structure; crystallographic notation; electrons and holes marked version Lecture 2: Energy-band model; band-gap energy; density of states; doping marked version Lecture 3: Thermal equilibrium, Fermi-Dirac distribution; relationship between EF and n, p; degenerately doped semiconductor marked version Lecture 4: Properties of carriers in semiconductors; carrier drift; conductivity and resistivity marked version Lecture 5: Carrier diffusion; generation and recombination marked version Lecture 6: Continuity equations; minority carrier diffusion equations; quasi-Fermi levels marked version METAL-SEMICONDUCTOR CONTACTS Lecture 7: Poisson's equation; Work function; metal-semiconductor band diagram; depletion-layer width marked version Lecture 8: Current flow; small-signal capacitance; practical ohmic contacts marked version (updated 2/20/13) pn JUNCTION DIODES Lecture 9: Electrostatics marked version Lecture 10: Ideal diode equation (marked version) Lecture 11: Narrow-base diode marked version Supplementary slide on hyperbolic functions Lecture 12: Junction breakdown; deviations from the ideal I-V marked version Lecture 13: Charge-control model; small-signal model; turn-off transient response marked version Lecture 14: Turn-on transient response; summary of important concepts; diode applications marked version (updated 3/12/13) THE MOS CAPACITOR Lecture 15: Energy band diagrams marked version Lecture 16: Electrostatics marked version Lecture 17: Small-signal capacitance marked version Lecture 18: Effect of oxide charges; poly-Si gate depletion effect; VT adjustment marked version THE MOSFET Lecture 19: Structure and operation; CMOS devices and circuits marked version Lecture 20: Qualitative theory; field-effect mobility; long-channel I-V characteristics marked version Lecture 21: P-channel MOSFET; CMOS inverter analysis; sub-threshold current; small-signal model marked version Lecture 22 - Slide 9 corrected 4/30/13: Velocity saturation; short-channel effect; MOSFET scaling approaches marked version - Slide 9 corrected 4/30/13 Supplementary slides to Lecture 22 Lecture 23: Drain-induced effects; source/drain structure; CMOS technology marked version (updated 4/18/13) THE BIPOLAR JUNCTION TRANSISTOR Lecture 24: Introduction; BJT fundamentals marked version Lecture 25: Ideal transistor analysis; narrow base and narrow emitter; Ebers-Moll model; base-width modulation marked version Lecture 26: Breakdown mechanisms; non-ideal effects; Gummel plot and numbers; modern BJT structures; base transit time marked version Lecture 27: Small-signal model; cutoff frequency; transient response marked version STATE-OF-THE-ART IC DEVICES Lecture 28: CMOS technology advancement |