UNIVERSITY OF CALIFORNIA
College of Engineering
Department of Electrical Engineering
and Computer Sciences
EECS 131
Semiconductor Electronics
Fall 98
Prof. John S. Smith
Week of Aug 25,27 Chapter 1:
Introduction, atomic structure, quantum mechanics of electrons
Week of Sept 1,3 Chapter 1 continued:
Continue quantum mechanics, basic free electron theory, statistical mechanics.
Week of Sept 8, 10 Chapter 2:
States of matter, bonding of atoms crystals and crystal symmetry, Lattice types, crystal defects, physical properties.
Week of Sept 15, 17 Chapter 2 continued:
Reciprocal Lattice, Bragg Scattering, Lattice dynamics, Phonons, Coupled Oscillators.
Week of Sept 22, 24 Chapter 2 continued:
Phase and group velocity, waves in crystals. Energy bands in solids, metals and insulators. Fermi levels and carrier concentrations.
Week of Sept 29, Oct 1 Chapter 3:
Semiconducting materials, Silicon and GaAs examples,
Band structure of semiconducting materials, valence and conduction band
model of semiconductors.
Defects, dopants and traps, equilibrium
characteristics of doped semiconductors
Week of Oct 6, 8 Chapter 4:
Carrier transport, drift, mobility, conductivity, diffusion, the Hall effect.
The Einstein relations, equilibrium across interfaces, ohmic and rectifying junctions.
Week of Oct 13, 16 Chapter 5:
MIDTERM
Excess carriers in semiconductors, injection, recombination, quasi-Fermi levels
Week of Oct 20, 22 Chapter 5 continued:
Transport and continuity equations, and the basic equations for semiconductor devices
Solution of the equations for special cases
Week of Oct 27, 29 Chapter 6:
P-N junctions, abrupt, linear. Modeling semiconductor devices.
Week of Nov 3, 5 Chapter 8:
Tunneling in semiconductors, Zener and avalanche breakdown in diodes
Week of Nov 10, 12 Chapter 10:
Ohmic contacts, tunnel diodes and Schottky barrier diodes, heterojunctions.
Week of Nov 17, 19 Chapter 16:
MOS devices, interface between silicon and silicon dioxide, transistors and charge coupled devices, structures and modes
Week of Nov 24, 26 Chapter 16 cont:
high mobility devices, short-channel effects, quantum tunneling effects and devices, ballistic effects.
Week of Dec 1, 3
Special topics.
Dec 8, 10:
Review.