EE290D
Lecture Notes |
Fall 2013 |
(pdf format, unless otherwise noted) |
Lecture 4: semiconductor band structure,
quantum confinement effect, low-field effective mobility, high-field velocity
saturation marked version Lecture 5:
thin-body MOSFETs quantum confinement and carrier mobility, series
resistance, apparent mobility, ballistic transport marked version Lecture 6: MOSFET compact
modeling, Technology CAD
Introduction
to double patterning approaches (Wikipedia) Lecture 10:
Strained-Si technology II: process implementation of stressors: eSiGe, SMT, CESL, Gate-Last on Planar and FinFETs Lecture 11:
process-induced performance variability I: Random marked version (updated on 11/5) Lecture 12:
process-induced performance variability II: Systematic marked version
Lecture 16: MOSFET
analog/RF performance metrics, bulk and thin-body MOSFET’s Analog/RF
performance Lecture 17: back-end-of-line
(BEOL) technology, system-level integrations: SiP,
TSV and Monolithic 3D Lecture 18: multiple-floating gate devices, 3-D vertical
NAND |
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Last
updated 11/24/13