Week 1: Si crystal structure and crystallographic notation; intrinsic carrier concentration
Week 2: Electron and hole concentrations, relationship with Fermi level; energy band diagram
Week 3: Conductivity; carrier mobility; carrier recombination-generation; non-uniformly doped semiconductor
Week 4: Illumination with light; M-S contacts; Schottky contact to p-type Si example
Week 5: Schottky diode current flow; practical ohmic contact; pn junction electrostatics
Week 6: Long-base diode; short-base diode; diode I-V characteristics
Week 7: Charge-control model; small-signal model; turn-off transient response.
Week 8: MOS capacitor energy band diagrams for n-type Si.
Week 9: PMOS capacitor electrostatics, threshold voltage, C-V characteristics.
Week 10: MOS capacitor non-idealities; MOSFET operation.
Week 11: Sample MOSFET I-V problem; MOSFET small-signal model, subthreshold current, drain-induced barrier lowering.
Week 12: Impact of velocity saturation on MOSFET I-V; short-channel effect.
Week 13: Thin-body MOSFET structures; BJT fundamentals.
Week 14: BJT I-V, Ebers-Moll model.
Week 15: BJT Early voltage, punchthrough, Gummel plot, charge-control model, small-signal model.