EE130/230A Lecture Notes | ||||||
Fall 2013 |
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(Powerpoint format, unless otherwise noted) |
Course Overview and Introduction SEMICONDUCTOR FUNDAMENTALS Lecture 1: General material properties; crystal structure; crystallographic notation; electrons and holes marked version Lecture 2: Energy-band model; band-gap energy; density of states; doping marked version Lecture 3 (updated 9/4/13): Thermal equilibrium, Fermi-Dirac distribution; relationship between EF and n, p; degenerately doped semiconductor marked version Lecture 4 (updated 9/3/13): Properties of carriers in semiconductors; carrier drift; conductivity and resistivity marked version and Answers to Questions Lecture 5: Carrier diffusion; generation and recombination marked version Lecture 6: Continuity equations; minority carrier diffusion equations; quasi-Fermi levels; Poisson's Equation marked version METAL-SEMICONDUCTOR CONTACTS Lecture 7: Work function; energy band diagrams; depletion-layer width; small-signal capacitance marked version Lecture 8: Current flow; Schottky diode applications; practical ohmic contacts marked version pn JUNCTION DIODES Lecture 9: Electrostatics marked version Lecture 10: Ideal diode equation marked version Lecture 11: Narrow-base diode; junction breakdown marked version Lecture 12: Deviations from the ideal I-V marked version Lecture 13: Charge-control model; small-signal model; turn-off transient response marked version Lecture 14: Turn-on transient response; summary of important concepts; diode applications marked version THE MOS CAPACITOR Lecture 15: Energy band diagrams marked version Lecture 16: Electrostatics marked version Lecture 17: Small-signal capacitance marked version Lecture 18: Effect of oxide charges; VT adjustment; poly-Si gate depletion effect marked version (updated 10/30/13) THE MOSFET Lecture 19: Structure and operation; qualitative theory of operation; field-effect mobility; body bias effect marked version (Slide 8 markings corrected 11/6/13) Lecture 20: Long-channel I-V characteristics marked version Lecture 21: P-channel MOSFET; CMOS inverter analysis; sub-threshold current; small-signal model marked version (Slide 19 corrected 11/14/13) Lecture 22: MOSFET scaling; velocity saturation; short-channel effects marked version Lecture 23: Source/drain structure; CMOS fabrication process; CMOS power crisis marked version Lecture 24: Advanced MOSFET structures THE BIPOLAR JUNCTION TRANSISTOR Lecture 25: Introduction; BJT fundamentals marked version Lecture 26: Ideal transistor analysis; narrow base and narrow emitter; Ebers-Moll model; base-width modulation marked version Lecture 27: Breakdown mechanisms; non-ideal effects; Gummel plot and numbers; modern BJT structures; base transit time marked version Lecture 28: Small-signal model; cutoff frequency; transient response marked version |