EE130 Homeworks Spring 2007 (Word format)
 Homework #1: Crystal structure; carrier concentrations; doping Assignment (due 1/29/07) Solution Homework #2: Carrier energy distributions; energy band diagram; dopant freezeout; carrier drift Assignment (due 2/5/07) Solution Homework #3: Mobility temperature dependence; band diagram, electrostatic potential, and E-field; minority carrier diffusion equations; quasi-Fermi levels Assignment (due 2/12/07) Solution Homework #4: Metal-semiconductor contacts: energy-band diagrams, electrostatics, I-V characteristics Assignment (due 2/21/07) Solution Homework #5: Practical ohmic contacts; MS junction small-signal capacitance; pn junction electrostatics Assignment (due 2/26/07) Solution Homework #6: pn junctions: carrier concentration profiles, current distributions, I-V characteristics, reverse breakdown Assignment (due 3/5/07) Solution (updated 3/6/07) Homework #7: pn junctions: non-ideal behavior, small signal model, transient response; short-base diode Assignment (updated 3/6/06, due 3/12/07) Solution (updated 3/13/06) Homework #8: optoelectronic diodes; BJT electrostatics; BJT performance parameters; project preparation Assignment -- Problem 4 updated 4/20/07 Solution (updated 3/22/07) Homework #9: BJT current components and performance parameters; Ebers-Moll model; BJT deviations from the ideal Assignment (updated 3/22/07) Solution (updated 4/4/07) Homework #10: BJT small signal model; BJT transient response; thyristor Homework #11: MOS capacitor: fundamentals, charge density, capacitance Homework #12: MOS capacitor: oxide charges, non-idealities, VT adjustment Homework #13: MOSFET: inversion charge density, long-channel I-V, body biasing, transconductance Homework #14: MOSFET: subthreshold leakage; velocity saturation; short channel effect; source/drain structure Assignment -- updated 5/2/07 Solution