EE243: Advanced IC Processing and Layout
Fall 2000 ANNOUNCEMENTSProfessor Andy Neureuther Office Hours M, Tu, Th, (F) 11, W
6.1 For a more realistic answer us a density of 1.78 g/cm3 for Ar. (It is also ok to work the problem with density of 3.0).
6.2 In part b) the product CTY remains constant.
6.3 The angles specified are the half angles so for say 10 degrees the source extends from -10 to +10 degrees. The void pinch ration is the ratio of two distances, namely the height of deposited material at which the trench closes to 50% divided by the width of the orginal trench.
4.2 The dose is 100 mJ/cm2. Use the image from the web to find the local intensity as a function of horizontal position. The highest intensity will likely be larger than unity so the maximum dose the resist will see is likely larger than 100 mJ/cm2.
4.3 Parts a) and b). The units are confusing so lets assume that everything is does not have units except the diffusion coefficient. In computing the diffusion length use the fact that the free volume F is zero except when it rises to 0.2.
4.3) Parts c) and d). The applet should now show the simulation results for 4 times zero, about one-third, about two-thirds and about the final time. To see the self-sharpening due to concentration dependent diffusion start with a slope of 1/200nm and use a nonlinear type II diffusion parameter of at least 4. The time interval between the curves will shows the growth of the deprotected region (space width) with time.
3.1 2pi/l => 2pi/Px
3.2 b) maximum => minimum
3.2 Work around to run clear field and opaque squares. First set up the problem using the feature aberration interaction applet using dark field. Then go to view input and copy to your clipboard. Then go out of the applet and open it again. Now choose icon #3 to write SPLAT input file. Paste the previous input in and then adjust. Field goes from from1 to 0 and feature from 1 to -1 (so net is zero). In addition for the phase defect, add a phase shifted rectangle for 120 degrees for a phase defect of 120 degrees.
*** Web Page Revised 10/16/2000 ***