EE230, Spring 2008
Solid State Electronics
Tuesday & Thursday 11:0012:30 pm, 299 Cory Hall
Prerequisites:
Physics 137A (Quantum Mechanics), Basic Semiconductor Physics as covered
in EE130
Primary Text:
Introduction to Solid State Physics, 8th edition, by Charles Kittel
(Wiley, 2005)
Supplementary Texts (available on reserve in Engineering library):
Fundamentals of Carrier Transport, by Mark Lundstrom,
(Cambridge Press, 2000).
Quantum Transport: Atom to Transistor, by Supriyo Datta
(Cambridge Press, 2005
The Physics of LowDimensional Semiconductors, by John H. Davies
(Cambridge Press, 2006)
Informational Handout
Class Syllabus
Academic Dishonesty Policy

Lecturer:
Professor Jeffrey Bokor
508 Cory Hall
Phone: (510) 6424134
jbokor@eecs.berkeley.edu
Office Hours:
508 Cory Hall
Wednesdays 2:003:00 pm
Course Administrative Assistant:
Rosemary Alonso
(510) 6422386
rosemary@eecs.berkeley.edu

Welcome to EE230
1/31/2008: Class will be held today at the regularly scheduled time.
2/22/2008: There was a typo in problem 4b of problem set 2.
The corrected version is now posted.
3/5/2008: See reference posted below on tight binding calculations
of diamond and zincblende crystals.
4/2/2008: There will be no class on April 24 and May 8.
Makeup lectures for these, plus the two classes that were cancelled
when I was sick are scheduled on the following dates from 5:00PM6:30PM
in 299 Cory:
1) Thursday, April 3
2) Tuesday, April 8
3) Thursday, April 10
4) Thursday, April 17
4/11/2008: For the next lecture on 4/15/2008, we will discuss the
selected papers on hot electron effects. These are posted below.
4/29/08: In Problem Set 5, number 1 it should read h bar. The
originally posted version did not clearly show the bar. A new version
has been posted.
5/6/08: The projects are due on Friday, 5/8/08 by 2pm to my office,
508 Cory Hall.
5/13/08: Hint on Final Problem Set, problem 2: Write the
energy flux Fw in terms of Te and J. Then when you calculate the
divergence of Fw, keep in mind that J must be constant along the slab
in steady state.
Back to Top
Chapter 1  Crystal
Structure
Chapter 2  Defects
Chapter 3  Phonons
Chapter 4  Free Electron
Gas
Chapter 5  Band Theory
Chapter 6  Momentum and
Effective Mass
Chapter 7  Heterostructures
and SubBands
(supplementary figures)
Chapter 8  Occupation
statistics
Chapter 9  Transport
theory
Chapter 10  Scattering
theory
Chapter 11 
Electronphonon scattering
Chapter 12
 Lowfield and Highfield transport
Chapter 13  Quantum
Transport
Chapter 14  Optical
Transitions
Chapter 15  Recombination
Chapter 16  Surfaces
Back to Top
Problem set 1 
solutions
Problem set 2  solutions
Problem set 3 
solutions
Problem set 4 
solutions
Problem set 5 
solutions
Final Problem set 
solutions
Back to Top
D. J. Chadi and M. L. Cohen,
"TightBinding Calculations of Valence Bands of Diamond and
Zincblende Crystals," Physica Status Solidi BBasic Research,
vol. 68, pp. 405419, 1975.
C. Waschke, et
al., “Coherent submillimeterwave emission from Bloch oscillations
in a semiconductor superlattice,” Phys. Rev. Lett. 70, 3319 
3322 (1993).
Selected Papers on Hot Electron Effects
 S. Takagi,
A. Toriumi, M. Iwase, and H. Tango, "On the Universality of Inversion
Layer Mobility in Si Mosfets .1. Effects of Substrate Impurity
Concentration," Ieee Transactions on Electron Devices, vol. 41, pp.
23572362, Dec 1994.
 S. Takagi,
A. Toriumi, M. Iwase, and H. Tango, "On the Universality of Inversion
Layer Mobility in Si Mosfets .2. Effects of Surface Orientation," Ieee
Transactions on Electron Devices, vol. 41, pp. 23632368, Dec 1994.
 J. E. Chung, M.
C. Jeng, J. E. Moon, P. K. Ko, and C. M. Hu, "LowVoltage HotElectron
Currents and Degradation in DeepSubmicrometer Mosfets," Ieee
Transactions on Electron Devices, vol. 37, pp. 16511657, Jul 1990.
 M. R. Pinto,
M. R. Pinto, J. Bude, and C. S. Rafferty, "Simulation Of ULSI Silicon
MOSFETs
Simulation Of ULSI Silicon MOSFETs," in VLSI Process and Device
Modeling, 1993. (1993 VPAD) 1993 International Workshop on, 1993, pp.
2225.
 A. Benvenuti, W. M.
Coughrau, Jr., and M. R. Pinto, "A thermalfully hydrodynamic model for
semiconductor devices and applications to IIIV HBT simulation,"
Electron Devices, IEEE Transactions on, vol. 44, pp. 13491359, 1997.
 M. V. Fischetti, "Monte Carlo
simulation of transport in technologically significant semiconductors
of the diamond and zincblende structures. I. Homogeneous transport,"
IEEE Transactions on Electron Devices, vol. 38, pp. 634649, 1991.
 M. V.
Fischetti, S. E. Laux, and D. J. Dimaria, "The Physics of HotElectron
Degradation of Si Mosfets  Can We Understand It," Applied Surface
Science, vol. 39, pp. 578596, Oct 1989.
 F.
Assaderaghi, P. K. Kop, and C. Hu, "Observation of velocity overshoot
in silicon inversion layers," Electron Device Letters, IEEE, vol. 14,
pp. 484486, 1993.

J. Bude, N. Sano, and A. Yoshii, "Hotcarrier luminescence in Si,"
Physical Review B, vol. 45, p. 5848, 1992.
 D. J. Frank, S.
E. Laux, and M. V. Fischetti, "Monte Carlo simulation of a 30 nm
dualgate MOSFET: how short can Si go?," in Electron Devices Meeting,
1992. Technical Digest., International, 1992, pp. 553556.
 J. A. Kash and
J. C. Tsang, "Dynamic internal testing of CMOS circuits using hot
luminescence," Electron Device Letters, IEEE, vol. 18, pp. 330332,
1997.
 J. C.
Tsang, J. A. Kash, and D. P. Vallett, "Timeresolved optical
characterization of electrical activity in integrated circuits,"
Proceedings of the IEEE, vol. 88, pp. 14401459, 2000.
Strained Silicon
Quantum Transport
 B. J. Vanwees, L. P.
Kouwenhoven, E. M. M. Willems, C. Harmans, J. E. Mooij, H. Vanhouten,
C. W. J. Beenakker, J. G. Williamson, and C. T. Foxon, "Quantum
Ballistic and Adiabatic ElectronTransport Studied with Quantum Point
Contacts," Physical Review B, vol. 43, pp. 1243112453, May 1991.

S. Frank, P. Poncharal, Z. L. Wang, and W. A. de Heer, "Carbon nanotube
quantum resistors," Science, vol. 280, pp. 17441746, Jun 1998.

C. Dekker, "Carbon nanotubes as molecular quantum wires," Physics
Today, vol. 52, pp. 2228, May 1999.

R. G. Knobel and
A. N. Cleland, "Nanometrescale displacement sensing using a single
electron transistor," Nature, vol. 424, pp. 291293, Jul 2003.

K. Uchida, J. Koga, R.
Ohba, and A. Toriumi, "Programmable singleelectron transistor logic
for future lowpower intelligent LSI: Proposal and roomtemperature
operation," Ieee Transactions on Electron Devices, vol. 50, pp.
16231630, Jul 2003.
Silicon Surfaces
 F. J. Giessibl, S.
Hembacher, H. Bielefeldt, and J. Mannhart, "Subatomic features on the
silicon (111)(7x7) surface observed by atomic force microscopy,"
Science, vol. 289, pp. 422425, Jul 2000.
 M. C. Hersam, N. P.
Guisinger, and J. W. Lyding, "Siliconbased molecular nanotechnology,"
Nanotechnology, vol. 11, pp. 7076, Jun 2000.
 M. C. Hersam, N. P.
Guisinger, J. W. Lyding, D. S. Thompson, and J. S. Moore, "Atomiclevel
study of the robustness of the Si(100)2x1 : H surface following
exposure to ambient conditions," Applied Physics Letters, vol. 78, pp.
886888, Feb 2001.
 J. E. Northrup and M. L.
Cohen, "Reconstruction Mechanism and SurfaceState Dispersion for
Si(111)(2 X 1)," Physical Review Letters, vol. 49, pp. 13491352,
1982.
